Datasheet 3DD1555A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	3DD1555A	CASE-RATED BIPOLAR TRANSISTOR CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY R 3DD1555A MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 0.6 s(max) Package TO-3P(H)IS APPLICATIONS z z Horizontal deflection output for color TV. z3DD1555A RoHS NPN , FEATURES z 3DD1555A is high breakdown volta	JILIN SINO

3DD15 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
3DD1545	NPN Transistor 1 3DD1545 NPN , 21 3DD1545 2 2.1 2.2 TO-3P(H)IS Tamb= 25 - Ta=25 Tc=25 VCE0 VCB0 VEB0 IC Ptot Tj Tstg 600 1500 5 5 3 50 150 -55 150 V V V A W Tamb= 25 17max 26.5max 4.5 15.5max 5.5max 3max 3.6 2max 0.75max 5.45 5.45 BCE 3.3min 0.9max - - a: tp 300 s, ICB0 IEB	Huajing Microelectronics
3DD1555	NPN Transistor »ª¾§·ÖÁ¢Æ÷¼þ 3DD1555 µÍÆ ·Å´ó¹Ü¿Ç¶î ¨Ë«¼ ÐÍ¾§Ìå¹Ü 1 ãµØÌëÓöÊÅ¸ 3DD1555 ¹è ¹ ÂÏçÈãµØÌäÆ ß¸¹Ñçµ©´÷» ì¿È¶ÙËØ¹ª¿ Íµ ½¹ÑÍº¥± ÃºÔÐØÌ÷Áçµ ½ÊÎÐ°×â· ¡Ð÷Áç	ETC
3DD15C	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.	Inchange Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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