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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS ·D
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY R 3DD1555A MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 0.6 s(max) Package TO-3P(H)IS APPLICATIONS z z Horizontal deflection output for color TV. z3DD1555A RoHS NPN , FEATURES z 3DD1555A is high breakdown volta
低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555P FOR LOW FREQUENCY R 3DD1555P 主要参数 MAIN CHARACTERISTICS 封装 Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 V 5A 3 V(max) 1 μs(max) 用途 ● 彩色电视机行输出电 路 APPLICATIONS ●
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A APPLICATIONS ·De
3DD157 型 NPN 硅低频大功率晶体管 参数符号 测试条件 PCM ICM 极 限 Tjm 值 Tstg Rth V(BR)CBO V(BR)CEO V(BR)EBO 直 ICBO 流 ICEO 参 IEBO 数 VBEsat VCEsat hFE TC=75℃ VCE=10V IC=1A ICB=3mA ICE=3mA IEB=1mA VCB=50V VCE=50V VEB=4V IC=1.5A IB=0.3A VCE=5V IC=1.5A 规范值 ABCDE
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max) Package TO-3P(H)IS APPLICATIONS z z Horizontal deflection output for color TV. FEATURES z3DD1555 NPN z 3DD1555 is high breakdown voltage of NPN bip
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