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Datasheet 3DD13001 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | 3DD13001 | TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR£¨NPN £©
TO¡ª 92
FEATURES Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and s |
 Jiangsu Changjiang Electronics |
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| 10 | 3DD13001 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
3DD13001
FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃)
1. BASE 2. COLLECTOR 3EMITTER
TRANSISTOR (NPN)
TO-251
DataSheet4U.com
Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage j |
 TRANSYS Electronics |
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| 9 | 3DD13001 | NPN Plastic-Encapsulated Transistor 3DD13001
Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
A
TO-92
D B
CLASSIFICATION OF hFE(1)
Product-Rank Range 3DD13001-A 17~23 3DD13001-B 20~26
G H E C F
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 SeCoS |
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| 8 | 3DD13001 | NPN Transistors SMD Type
NPN Transistors 3DD13001
Transistors
■ Features
● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A
1.70 0.1
0.42 0.1
0.46 0.1
1.Base 2.Collector 3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector-Base Voltage Collector-Emitter Voltage Em |
 Kexin |
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