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35N15E 전자부품 데이터시트
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35N15E 전자부품 회로 및
기능 검색 결과
35N15E
Motorola Semiconductors
MTW35N15E
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW35N15E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withs
관련 부품 35N1 상세설명
35N10
N-Channel MOSFET Transistor
Inchange Semiconductor
PDF
N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 35N10 ·FEATURES ·Drain Current ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,conv
Inchange Semiconductor
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PartNumber.co.kr | 2020 | 연락처 |