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HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q (Electrically Isolated Back Surface) IXFR 32N50Q N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W Preliminary data Symbol VDSS VDGR VGS VGSM ID25 I DM I AR
GenX3TM 600V IGBTs High-Speed PT IGBTs for 40-100kHz Switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 11
UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary 60V, 30A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche charact
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFT 30N50 IXFH/IXFT 32N50 V DSS 500 V 500 V I D25 30 A 32 A R DS(on) 0.16 W 0.15 W trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS V GSM C
UNISONIC TECHNOLOGIES CO., LTD 30N06-Q Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche character
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N15 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,conv
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