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2SK3419 전자부품 데이터시트



2SK3419 전자부품 회로 및
기능 검색 결과



2SK3419  

Renesas
Renesas

2SK3419

Silicon N Channel MOS FET

2SK3419 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1099




관련 부품 2SK34 상세설명

2SK3482  

  
MOS Field Effect Transistor

SMD Type MOS Field Effect Transistor 2SK3482 TO-252 IC MOSFET Features Super low on-state resistance: RDS(on)1 = 33m RDS(on)2 = 39 m MAX. (VGS = 10 V, ID = 18A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 +0.15 0.50-0.15 Low Ciss: Ciss = 3600 pF TYP.



Guangdong Kexin Industrial
Guangdong Kexin Industrial

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2SK3480  

  
MOS Field Effect Transistor

SMD Type MOS Field Effect Transistor 2SK3480 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on)1 = 31 m RDS(on)2 = 36 m MAX. (VGS = 10 V, ID = 25A) +0.2 8.7-0.2 MAX. (VGS = 4.5 V, ID = 25 A) Low Ciss: Ciss = 360



Guangdong Kexin Industrial
Guangdong Kexin Industrial

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2SK3424  

  
MOS Field Effect Transistor

SMD Type MOS Field Effect Transistor 2SK3424 MOSFET Features 4.5-V drive available Low on-state resistance RDS(on)1 = 1.5m MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 24V, VGS = 10 V) Built-in gate protection diode Surface mount device available Absolute Maximu



Kexin
Kexin

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2SK3448  

  
Ultrahigh-Speed Switching Use

Ordering number : ENN6785 2SK3448 N-Channel Silicon MOSFET 2SK3448 Ultrahigh-Speed Switching Use Features • • • • Package Dimensions unit : mm 2087A [2SK3448] 2.5 1.45 6.9 1.0 Low ON-resistance. Ultrahigh-speed switching. 4V drive. Meets radial taping. 4.5 1.0 0.6 1.0 0.9 0.5 1 2



Sanyo Semicon Device
Sanyo Semicon Device

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2SK3445  

  
DC-DC Converter Applications

2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3445 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage



Toshiba Semiconductor
Toshiba Semiconductor

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2SK3443  

  
SWITCHING REGULATOR DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS



Toshiba Semiconductor
Toshiba Semiconductor

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