2SK3212
Renesas
Silicon N Channel MOS FET2SK3212
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.1 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1092-0300 (Previous: ADE-208-752A)
Rev.3.00 Sep 07, 20
2SK3212
Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching2SK3212
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-752 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D