2SK3211L
Renesas
Silicon N Channel MOS FET2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
REJ03G1091-0400 Rev.4.00
May 15, 2006
Outline
RENE
2SK3211L
Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
2SK3211