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Datasheet 2SK3209 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK3209 | Silicon N Channel MOS FET 2SK3209
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 40 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1090-0300 (Previous: ADE-208-759A)
Target Specification Rev.3.00
Sep 07, 2005
RENESAS Packag |
 Renesas |
 |
| 1 | 2SK3209 | Silicon N Channel MOS FET High Speed Power Switching 2SK3209
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features
• Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Dr |
 Hitachi Semiconductor |
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