2SK3152
Renesas
Silicon N Channel MOS FET2SK3152
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =100 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1077-0200 (Previous: ADE-208-732)
Rev.2.00 Sep 07, 20
2SK3152
Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching2SK3152
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-732 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D