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Datasheet 2SK3150 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SK3150 | Silicon N Channel MOS FET 2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =45 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1075-0400 (Previous: ADE-208-750B)
Rev.4.00 Sep 07, 2005
RENESAS Package code: |
 Renesas |
 |
| 5 | 2SK3150 | Silicon N Channel MOS FET High Speed Power Switching 2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-750A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. G |
 Hitachi Semiconductor |
|
| 4 | 2SK3150L | Silicon N Channel MOS FET 2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =45 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1075-0400 (Previous: ADE-208-750B)
Rev.4.00 Sep 07, 2005
RENESAS Package code: |
Renesas |
|
| 3 | 2SK3150L | Silicon N Channel MOS FET High Speed Power Switching 2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-750A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. G |
Hitachi Semiconductor |
|
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