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SMD Type MOSFET Product specification 2SK1399 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Not necessary to consider driving current because of it is high input impedance Possible to reduce the number of parts by omitting the bias resistor +0.1 1.3-0.1 Can be driven by a 3.0-V power
SMD Type MOS Field Effect Transistor 2SK1399 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MOSFET Unit: mm +0.1 2.4-0.1 Not necessary to consider driving current because of it is high input impedance Possible to reduce the number of parts by omitting the bias resistor +0.1 1.3-0.1 Can be driven by a 3.0-V
2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 1 2 1 D
2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 1 2 1 D
2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 1 2 1 D
2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S
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