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Silicon MOS FETs (Small Signal) 2SK0664 (2SK664) Silicon N-Channel MOS FET unit: mm For switching I Features (0.425) 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain c
Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching 0.3+0.1 –0.0 unit: mm (0.425) 0.15+0.10 –0.05 I Features 3 (0.65) (0.65) 1.3±0.1 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source vo
Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification unit: mm (0.425) I Features 0.3+0.1 –0.0 3 0.15+0.10 –0.05 G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic
Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power
Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching I Features 0.75 max. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable powe
Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.0±0.2 G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone
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