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Datasheet 2SJ553S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SJ553S | P-Channel MOSFET ( Transistor ) 2SJ553(L), 2SJ553(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0900-0400 (Previous: ADE-208-650B)
Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.028 Ω typ.
• Low drive current. • 4 V gate drive devices. • High speed switching.
Outline
RENES |
 Renesas |
 |
| 1 | 2SJ553S | Silicon P Channel MOS FET High Speed Power Switching 2SJ553(L),2SJ553(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-650B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
LDPAK
4 D 1 G 1 4
2
3
2
3
1. Gate 2. Dra |
 Hitachi Semiconductor |
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