2SJ552S
Renesas
P-Channel MOSFET ( Transistor )2SJ552(L), 2SJ552(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0899-0400 (Previous: ADE-208-651B)
Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.042 Ω typ.
• Low drive current. • 4 V gate drive devices.
2SJ552S
Hitachi Semiconductor
Silicon P Channel MOS FET High Speed Power Switching2SJ552(L),2SJ552(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-651B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.042 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
LDPAK