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Datasheet 2SJ552 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SJ552 | P-Channel MOSFET ( Transistor ) 2SJ552(L), 2SJ552(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0899-0400 (Previous: ADE-208-651B)
Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.042 Ω typ.
• Low drive current. • 4 V gate drive devices. • High speed switching.
Outline
RENESA |
 Renesas |
 |
| 5 | 2SJ552 | Silicon P Channel MOS FET High Speed Power Switching 2SJ552(L),2SJ552(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-651B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.042 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
LDPAK
4 D 1 G 1 4
2
3
2
3
1. Gate 2. Dra |
 Hitachi Semiconductor |
|
| 4 | 2SJ552L | P-Channel MOSFET ( Transistor ) 2SJ552(L), 2SJ552(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0899-0400 (Previous: ADE-208-651B)
Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.042 Ω typ.
• Low drive current. • 4 V gate drive devices. • High speed switching.
Outline
RENESA |
Renesas |
|
| 3 | 2SJ552L | Silicon P Channel MOS FET High Speed Power Switching 2SJ552(L),2SJ552(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-651B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.042 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
LDPAK
4 D 1 G 1 4
2
3
2
3
1. Gate 2. Dra |
Hitachi Semiconductor |
|
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