|
|
Datasheet 2SJ551L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SJ551L | P-Channel MOSFET ( Transistor ) 2SJ551(L), 2SJ551(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0898-0400 (Previous: ADE-208-647B)
Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.050 Ω typ.
• Low drive current. • 4 V gate drive devices. • High speed switching.
Outline
RENES |
 Renesas |
 |
| 1 | 2SJ551L | Silicon P Channel MOS FET High Speed Power Switching 2SJ551(L),2SJ551(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-647B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.050 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
LDPAK
4 4
D 1 1
2
3
G
2
3
1. Gate 2. D |
 Hitachi Semiconductor |
|
| Esta página es del resultado de búsqueda del 2SJ551L. Si pulsa el resultado de búsqueda de 2SJ551L se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |