2SJ550L
Renesas
P-Channel MOSFET ( Transistor )2SJ550(L), 2SJ550(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0897-0300 (Previous: ADE-208-633A)
Rev.3.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.075 Ω typ.
• Low drive current. • 4 V gate drive devices.
2SJ550L
Hitachi Semiconductor
Silicon P Channel MOS FET High Speed Power Switching2SJ550(L),2SJ550(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-633A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.075 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
LDPAK