|
2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Out
2SJ244 Silicon P Channel MOS FET Description High speed power switching Low voltage operation REJ03G0853-0200 (Previous: ADE-208-1187) Rev.2.00 Sep 07, 2005 Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive
Ordering number:EN4241 P-Channel Silicon MOSFET 2SJ277 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the number of manufacturing pro- cesses for 2
Ordering number:EN4749 P-Channel Silicon MOSFET 2SJ276 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the assembling time for 2SJ276- applied equip
Ordering number:EN4240 P-Channel Silicon MOSFET 2SJ275 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the number of manufacturing pro- cesses for 2
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |