2SJ130L
Hitachi Semiconductor
Silicon P-Channel MOS FET2SJ130(L), 2SJ130(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasoni
2SJ132-Z
MOS FIELD EFFECT POWER TRANSISTORSDATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ132, 2SJ132-Z
P-CHANNEL POWER MOS FET FOR SWITCHING
FEATURES • Gate drive available at logic level (VGS = −4 V) • High current control available in small
dimension due to low RDS(on) (≅ 0.25 Ω) • 2SJ132-Z is a lead process product and is
NEC
PDF
2SJ130S
Silicon P-Channel MOS FET2SJ130(L), 2SJ130(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators
Outline
DPAK-1 4 4
Hitachi Semiconductor
PDF
2SJ133-Z
P-CHANNEL POWER MOS FETDATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ133, 2SJ133-Z
P-CHANNEL POWER MOS FET FOR SWITCHING
FEATURES • Gate drive available at logic level (VGS = –4 V) • High current control available in small
dimension due to low RDS(on) (≅ 0.45 Ω) • 2SJ133-Z is a lead process product and is
NEC
PDF