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2SJ130(L), 2SJ130(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline DPAK-1 4 4
DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = −4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω) • 2SJ132-Z is a lead process product and is
Ordering number:EN3766 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ193] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications A
Ordering number:EN3761A Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ188 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SJ188] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 123 2.3 2.3 0.8
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PartNumber.co.kr | 2020 | 연락처 |