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Datasheet 2SD2114K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD2114K | Power Transistor SMD Type
TransistIoCrs
Power Transistor 2SD2114K
Features
High DC current gain. High emitter-base voltage. Low VCE (sat).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
Absolute Maximum Ratings Ta = 2 |
 Kexin |
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| 1 | 2SD2114K | High-current Gain MediumPower Transistor (20V/ 0.5A) Transistors
High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStructure Epitaxial planar type NPN silicon t |
 ROHM Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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