2SD2114
SeCoS Halbleitertechnologie GmbH
NPN Plastic Encapsulated Transistor
2SD2114
0.5 A, 25 V NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen and lead free
FEATURES
z z z
High DC current gain :hFE = 1200(Typ) High emitter-base voltag
2SD2114
SeCoS
NPN Plastic-Encapsulate TransistorElektronische Bauelemente
2SD2114
0.5A , 25V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
High DC Current Gain. High Emitter-Base Voltage. VEBO=12V (Min.)
CLASSIFICATION OF hFE
2SD2114
JinYu
NPN TransistorTRANSISTOR (NPN)
FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat).
MARKING: BBV,BBW
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Volta
2SD2114K
ROHM Semiconductor
High-current Gain MediumPower Transistor (20V/ 0.5A)Transistors
High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStruc
2SD2114K
Kexin
Power TransistorSMD Type
TransistIoCrs
Power Transistor 2SD2114K
Features
High DC current gain. High emitter-base voltage. Low VCE (sat).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.