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2SD2114  

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie GmbH

2SD2114

NPN Plastic Encapsulated Transistor

2SD2114 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z High DC current gain :hFE = 1200(Typ) High emitter-base voltag



2SD2114  

SeCoS
SeCoS

2SD2114

NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE  High DC Current Gain.  High Emitter-Base Voltage. VEBO=12V (Min.) CLASSIFICATION OF hFE



2SD2114  

JinYu
JinYu

2SD2114

NPN Transistor

TRANSISTOR (NPN) FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Volta



2SD2114K  

ROHM Semiconductor
ROHM Semiconductor

2SD2114K

High-current Gain MediumPower Transistor (20V/ 0.5A)

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) FStruc



2SD2114K  

Kexin
Kexin

2SD2114K

Power Transistor

SMD Type TransistIoCrs Power Transistor 2SD2114K Features High DC current gain. High emitter-base voltage. Low VCE (sat). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.



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