2SD110
Inchange Semiconductor Company
Silicon NPN Power TransistorINCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD110
DESCRIPTION ·High Power Dissipation: PC= 100W@TC= 25℃ ·High Current Capability: IC = 10A
APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC conv
2SD1101
Hitachi Semiconductor
Silicon NPN Epitaxial2SD1101
Silicon NPN Epitaxial
Application
• Low frequency amplifier • Complementary pair with 2SB831
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SD1101
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter v
2SD1101
Guangdong Kexin Industrial
Silicon NPN EpitaxialSMD Type
Silicon NPN Epitaxial 2SD1101
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
Low Frequency amplifier.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.c
2SD1101
Renesas
Silicon NPN Epitaxial2SD1101
Silicon NPN Epitaxial
REJ03G0775-0200 (Previous ADE-208-1142) Rev.2.00 Aug.10.2005
Application
• Low frequency amplifier • Complementary pair with 2SB831
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3 1 2
1. Emitter 2. Base 3.
2SD1105
Inchange Semiconductor Company
Silicon NPN Power TransistorINCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1105
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and High Reliability
APPLICATIONS ·Designed for hi