|
|
Datasheet 2SD103 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2SD103 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SD103
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25℃ Complement to Type 2SB503
APPLICATIONS ·Designed for audio power amplifier, power swit |
 Inchange Semiconductor |
 |
| 7 | 2SD1030 | Silicon NPN epitaxial planer type(For low-frequency amplification) Transistor
2SD1030
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
2.8 –0.3
+0.2
s Features
q q q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
+0.2 1.1 –0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to b |
 Panasonic Semiconductor |
|
| 6 | 2SD1032 | SI NPN TRIPLE DIFFUSED PLANAR |
Panasonic Semiconductor |
|
| 5 | 2SD1032 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1032
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812
APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE |
Inchange Semiconductor |
|
| Esta página es del resultado de búsqueda del 2SD103. Si pulsa el resultado de búsqueda de 2SD103 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1] [2]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |