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www.DataSheet4U.net Power Transistors 2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and
www.DataSheet4U.net Transistors 2SD0973A (2SD973A) Silicon NPN epitaxial planar type For low-frequency driver amplification 6.9±0.1 Unit: mm 2.5±0.1 (1.0) (0.4) 2.0±0.2 • Low collector-emitter saturation voltage VCE(sat) • M type package allowing easy automatic and manual insertion as w
www.DataSheet4U.net Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) ■ Features • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Mini power type pa
www.DataSheet4U.net Transistors 2SD0958 (2SD958) Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 3.5±0.1 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emit
www.DataSheet4U.net Power Transistors 2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and
www.DataSheet4U.net Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. 0.7±0.
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