Datasheet 2SD0662B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SD0662B	Silicon NPN epitaxial planar type www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT �	Panasonic Semiconductor

2SD06 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SD0601	Silicon NPN epitaxial planer type Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE	Panasonic Semiconductor
2SD0601A	Silicon NPN epitaxial planer type Transistor Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of	Panasonic Semiconductor
2SD0602A	Silicon NPN epitaxial planer type Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through th	Panasonic Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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