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Datasheet 2SC603 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | 2SC603 | 2SC603 2SC603
参考資料
規格
社名 用途 構造 Mnf. App. Type
最大定格 Max. Ratings (Ta=25゚C)
VCBO VEBO Ic
Pc Tj
(V) (V) (mA) (mW) (゚C)
電気的特性 Elec. Character. (Ta=25゚C)
直流又はパルスhFE fab/ft* Cob
VCE(V) Ic(mA)
(MHz) (pF )
NEC Ch Si.E 7
7 200 150 150
1 |
ETC |
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4 | 2SC6033 | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6033
Unit : mm
High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications
TSM
0 . 9 5 0 .9 5
2. 9± 0 . 2 1. 9± 0. 2
• • •
High DC current gain: hFE = 250 to 400 (IC = 0.3 A) Low collector-emit |
Toshiba Semiconductor |
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3 | 2SC6034 | Silicon NPN Triple Diffused Type 2SC6034
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SC6034
High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
• High-speed switching: tf = 0.24 μs (max) (IC = 0.3 A) Unit: mm
Absolute Maximum Ratings (Ta = |
Toshiba Semiconductor |
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2 | 2SC6036 | Silicon NPN epitaxial planar type Transistors
2SC6036
Silicon NPN epitaxial planar type
For general amplification Complementary to 2SA2162
0.05 0.33+ −0.02
Unit: mm
0.05 0.10+ −0.02
Features
Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equ |
Panasonic Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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