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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5949 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Complement to Type 2SA2121 APPLICATIONS ·Power amplifier applications ·Reco
Power Transistors 2SC5913 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT Monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area • Built-in dumper diode 26.5±0.
OUTLINE DRAWING Unit:mm 4.0 0.1 0.45 1.27 1.27 ‡@ ‡A ‡B TERMINAL CONNECTOR EIJA: - Item A B hFE 200 to 700350 to 1200 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-
Ordering number : ENN7787 2SC5947 NPN Triple Diffused Planar Silicon Transistor 2SC5947 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2069C [2SC5947] 0.8 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Ad
Ordering number : ENN8029 2SC5999 2SC5999 Applications • NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Relay drivers, lamp drivers, motor drivers, inverters. Features • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emi
OUTLINE DRAWING Unit:mm 4.0 0.1 0.45 1.27 1.27 ‡@ ‡A ‡B TERMINAL CONNECTOR EIJA: - Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in you
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