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2SC5894 전자부품 데이터시트



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2SC5894  

Renesas Technology
Renesas Technology

2SC5894

Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporati




관련 부품 2SC58 상세설명

2SC5895  

  
SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5895 DESCRIPTION ·With TO-220F package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·Power supply for audio and visual equipments such as TVs and VCRs ·Industrial equip



SavantIC
SavantIC

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2SC5890  

  
Trans GP BJT NPN 12V 0.075A 3-Pin MPAK



New Jersey Semiconductor
New Jersey Semiconductor

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2SC5889  

  
2SC5889

Ordering number : ENN7401 2SC5889 NPN Epitaxial Planar Silicon Transistors 2SC5889 DC / DC Converter Applications Applications • Package Dimensions unit : mm 2033A [2SC5889] 4.0 2.2 Relay drivers, lamp drivers, motor drivers, strobes. Features • • • • • Adoption of MBIT process. La



Sanyo Semicon Device
Sanyo Semicon Device

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2SC5896  

  
Silicon NPN epitaxial planar type

Power Transistors 2SC5896 Silicon NPN epitaxial planar type Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters ■ Features • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage V



Panasonic Semiconductor
Panasonic Semiconductor

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2SC5890  

  
Silicon NPN Epitaxial UHF / VHF wide band amplifier

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 200



Renesas Technology
Renesas Technology

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2SC5890  

  
Silicon NPN RF Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5890 DESCRIPTION ·High Gain Bandwidth Product fT = 7.8 GHz TYP. ·High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICATIONS ·Designed for use in UHF ~ VHF wide band amp



Inchange Semiconductor
Inchange Semiconductor

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