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Datasheet 2SC5890 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC5890 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5890
DESCRIPTION ·High Gain Bandwidth Product
fT = 7.8 GHz TYP. ·High power gain and low noise figure ;
PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz
APPLICATIONS ·Designed for use in UHF ~ VHF wide band amp |
 Inchange Semiconductor |
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| 2 | 2SC5890 | Silicon NPN Epitaxial UHF / VHF wide band amplifier
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 200 |
 Renesas Technology |
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| 1 | 2SC5890 | Trans GP BJT NPN 12V 0.075A 3-Pin MPAK |
 New Jersey Semiconductor |
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