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Datasheet 2SC5765 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SC5765 | MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS 2SC5765
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5765
MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS
Unit: mm
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Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA)
Maximum Ratings (Ta = 25°C)
Characteristic Collector-Base voltage Collector |
 Toshiba Semiconductor |
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| 1 | 2SC5765 | NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
2SC5765
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER AMPLIFIER STROBO FLASH
DESCRIPTION
medium power amplifier applications strobo flash applications
FEATURES
* Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)
ORDERING INFORMATION
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