파트넘버.co.kr 2SC5763 데이터시트 검색

2SC5763 전자부품 데이터시트



2SC5763 전자부품 회로 및
기능 검색 결과



2SC5763  

Sanyo Semicon Device
Sanyo Semicon Device

2SC5763

Switching Regulator Applications

Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliabili




관련 부품 2SC57 상세설명

2SC5788  

  
Silicon NPN epitaxial planar type

Power Transistors 2SC5788 Silicon NPN epitaxial planar type Unit: mm 13.0±0.2 ■ Features • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector to emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • Allowing automati



Panasonic Semiconductor
Panasonic Semiconductor

PDF



2SC5716  

  
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Color TV · · · High voltage: VCBO = 1700 V High speed: tf (2) = 0.2 µs (typ.) Collector metal (fin) is fully covered with mold resin. Unit: mm Maximum Ratings (Tc



Toshiba Semiconductor
Toshiba Semiconductor

PDF



2SC5772  

  
Trans GP BJT NPN 9V 0.075A 3-Pin MPAK



New Jersey Semiconductor
New Jersey Semiconductor

PDF



2SC5709  

  
DC / DC Converter Applications

Ordering number : ENN6914 2SA2043 / 2SC5709 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2043 / 2SC5709 DC / DC Converter Applications Applications • Package Dimensions unit : mm 2045B [2SA2043 / 2SC5709] 6.5 5.0 4 Relay drivers, lamp drivers, motor drivers, strobes. Features • • �



Sanyo Semicon Device
Sanyo Semicon Device

PDF



2SC5754-T2-A  

  
NPN SILICON RF TRANSISTOR

PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) =



CEL
CEL

PDF



2SC5704-A  

  
NPN SILICON RF TRANSISTOR

DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz �



CEL
CEL

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처