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Ordering number:ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT
Ordering number:ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT
:mm 2.5 0.5 1.5 0.5 1 2 3 1 2 3 JEITA:SC-59 VCBO VCEO VEBO IC PC Tj Tstg 15 6 1.5 50 150 +125 -55~+125 V V V mA mW I I CBO EBO VCB =10V, I E =0mA VEB =1V, I C=0mA VCE =5V, I C=10mA VCE =5V, I E =10mA VCB =5V, I E =0mA, f =1MHz 2 1.0 1.0 50 5.0 9.0 8.0 1.0 12.0 1.4 2
Ordering number : ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5683] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High
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