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PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC =
Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 15.0±0.5 φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder D
Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=11dB typ (f=1GHz). · High cutoff frequency : fT=11GHz typ. · Low voltage, lo
Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Packa
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA,
Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FEATURES • • • • • Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 1
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