파트넘버.co.kr 2SC538 데이터시트 검색

2SC538 전자부품 데이터시트



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2SC538  

Micro Electronics
Micro Electronics

2SC538

(2SCxxx) Low Level and General Purpose Amplifiers

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2SC5380  

Panasonic Semiconductor
Panasonic Semiconductor

2SC5380

For horizontal deflection output

Power Transistors 2SC5380, 2SC5380A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide ar



2SC5380A  

Panasonic Semiconductor
Panasonic Semiconductor

2SC5380A

For horizontal deflection output

Power Transistors 2SC5380, 2SC5380A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide ar



2SC5381  

Panasonic Semiconductor
Panasonic Semiconductor

2SC5381

NPN Transistor

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2SC5382  

Shindengen Electric
Shindengen Electric

2SC5382

(2SCxxxx) TRANSISTOR




2SC5382  

SavantIC
SavantIC

2SC5382

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5382 DESCRIPTION ·With TO-220F package ·High Voltage ·High speed switching PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) an



2SC5382  

Shindengen Electric Mfg.Co.Ltd
Shindengen Electric Mfg.Co.Ltd

2SC5382

Switching Power Transistor(6A NPN)

SHINDENGEN Switching Power Transistor 2SC5382 6A NPN OUTLINE DIMENSIONS Case : FTO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55•`150•Ž Junction Temperature Tj 150 •Ž Collector



2SC5383  

Isahaya Electronics
Isahaya Electronics

2SC5383

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉 2SC5383 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) DESCRIPTION 2SC5383 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed



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