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Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q 0.65 max. 1.0 1.0 High foward current transfer ratio hFE. Low collector to emitter saturation vol
Semiconductor 2SC5345SF NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response Ordering
AiT Components Inc. www.ait-components.com 2SC5343X GENERAL PURPOSE TRANSISTORS NPN SILICON DESCRIPTION FEATURES The 2SC5343Q~2SC5343S is available in SOT-23 Package Excellent hFE linearity hFE(2)=100(TYP) at VCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(TYP) Low noise: NF=1dB(TYP).at
AiT Components Inc. www.ait-components.com 2SC5343X GENERAL PURPOSE TRANSISTORS NPN SILICON DESCRIPTION FEATURES The 2SC5343Q~2SC5343S is available in SOT-23 Package Excellent hFE linearity hFE(2)=100(TYP) at VCE=6V,IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(TYP) Low noise: NF=1dB(TYP).at
Semiconductor 2SC5345N NPN Silicon Transistor Description • RF amplifier Features • • • • High transition frequency : fT=550MHz(Typ.) @[VCE=6V, IC=1mA] Low output capacitance : Cob=1.4pF (Typ.) @[VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Ordering Infor
2SC5354 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free FEATURES * Excellent hFE Linearity * Low Noise 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC Ib PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emit
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