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Datasheet 2SC5305 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC5305 | Inverter Lighting Applications Ordering number:ENN5884A
NPN Triple Diffused Planar Silicon Transistor
2SC5305LS
Inverter Lighting Applications
Features
· High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm 2079D
[2SC5305]
10.0 3.2
3.5 7.2
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 Sanyo Semicon Device |
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| 2 | 2SC5305 | HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
FEATURES
* High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well |
 Unisonic Technologies |
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| 1 | 2SC5305LS | Inverter Lighting Applications Ordering number:ENN5884A
NPN Triple Diffused Planar Silicon Transistor
2SC5305LS
Inverter Lighting Applications
Features
· High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm 2079D
[2SC5305]
10.0 3.2
3.5 7.2
|
Sanyo Semicon Device |
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