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SMD Type Small Signal Transistor 2SC5212 Transistors Features Low collector saturation voltage VCE(sat)=0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-
Ordering number : ENA1074A 2SC5245A RF Transistor 10V, 30mA, fT=8GHz, NPN Single MCP http://onsemi.com Features • Low-noise : NF=0.9dB typ (f=1GHz) • High gain : NF=1.4dB typ (f=1.5GHz) : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-curre
2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 µsec (typ) • Built-in damper diode type • Isolated package TO-3P•FM Outline TO-3PFM 2 1. Base 2. Coll
Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features · High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5264] 10.0 3.2 3.5 7.2
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5218 DESCRIPTION ·High Gain Bandwidth Product fT = 9 GHz TYP. ·High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz APPLICATIONS ·Designed for use in VHF ~ UHF amplifiers. ABSOLUTE MAX
SMD Type Small Signal Transistor 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Transistors Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter
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