파트넘버.co.kr 2SC5225 데이터시트 검색

2SC5225 전자부품 데이터시트



2SC5225 전자부품 회로 및
기능 검색 결과



2SC5225  

Hitachi Semiconductor
Hitachi Semiconductor

2SC5225

Silicon NPN Epitaxial Transistor

2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Feature




관련 부품 2SC52 상세설명

2SC5218  

  
Silicon NPN Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5218 DESCRIPTION ·High Gain Bandwidth Product fT = 9 GHz TYP. ·High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz APPLICATIONS ·Designed for use in VHF ~ UHF amplifiers. ABSOLUTE MAX



Inchange Semiconductor
Inchange Semiconductor

PDF



2SC5214  

  
Small Signal Transistor

SMD Type Small Signal Transistor 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Transistors Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter



Kexin
Kexin

PDF



2SC5212  

  
Small Signal Transistor

SMD Type Small Signal Transistor 2SC5212 Transistors Features Low collector saturation voltage VCE(sat)=0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-



Kexin
Kexin

PDF



2SC5264LS  

  
Inverter Lighting Applications

Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features · High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5264] 10.0 3.2 3.5 7.2



Sanyo Semicon Device
Sanyo Semicon Device

PDF



2SC5245A  

  
RF Transistor

Ordering number : ENA1074A 2SC5245A RF Transistor 10V, 30mA, fT=8GHz, NPN Single MCP http://onsemi.com Features • Low-noise : NF=0.9dB typ (f=1GHz) • High gain : NF=1.4dB typ (f=1.5GHz) : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-curre



ON Semiconductor
ON Semiconductor

PDF



2SC5219  

  
Silicon NPN Triple Diffused Planar

2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 µsec (typ) • Built-in damper diode type • Isolated package TO-3P•FM Outline TO-3PFM 2 1. Base 2. Coll



Hitachi
Hitachi

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처