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Datasheet 2SC5218 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC5218 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5218
DESCRIPTION ·High Gain Bandwidth Product
fT = 9 GHz TYP. ·High Gain, Low Noise Figure
PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz
APPLICATIONS ·Designed for use in VHF ~ UHF amplifiers.
ABSOLUTE MAX |
 Inchange Semiconductor |
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| 2 | 2SC5218 | Silicon NPN Epitaxial 2SC5218
Silicon NPN Epitaxial
ADE-208-279 1st. Edition
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC5218
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 Hitachi Semiconductor |
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| 1 | 2SC5218 | Silicon NPN Epitaxial To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i |
 Renesas |
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