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2SC5200B 전자부품 데이터시트



2SC5200B 전자부품 회로 및
기능 검색 결과



2SC5200B  

JILIN SINO
JILIN SINO

2SC5200B

Silicon NPN Triple Diffused Transistor

NPN 三重扩散晶体管 Silicon NPN Triple Diffused Transistor R 2SC5200B 用途 z 应用于功率放大器 产品特性 z高集电极电压:VCEO=250V (min) z与 2SA1943B 互补 z推荐用于 100W 高保真音响频率放大器输出电路 z环保(RoHS




관련 부품 2SC520 상세설명

2SC5209  

  
Small Signal Transistor

SMD Type Small Signal Transistor 2SC5209 Transistors Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Peak collector current Collector current Collec



Kexin
Kexin

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2SC5206  

  
Silicon NPN Triple Diffused Transistor

2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emi



Hitachi
Hitachi

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2SC5208  

  
Silicon NPN Triple Diffused Type

2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications • • High-speed switching: tr = 1.0 μs (max) ,tf = 1.5 μs (max) High breakdown voltage: VCEO = 400 V



Toshiba
Toshiba

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2SC5200A  

  
Silicon NPN Triple Diffused Transistor

NPN 三重扩散晶体管 Silicon NPN Triple Diffused Transistor R 2SC5200A 用途  应用于功率放大器 APPLICATIONS  Power Amplifier Applications 产品特性 高集电极电压:VCEO=230V (min) 与 2SA1943A 互补 推荐用于 100W 高保真音响频率放大器输出电路



JILIN SINO
JILIN SINO

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2SC5209  

  
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION



ETC
ETC

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2SC5201  

  
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symb



Toshiba Semiconductor
Toshiba Semiconductor

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