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Datasheet 2SC5198 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SC5198 | Silicon NPN Triple Diffused Transistor NPN Silicon NPN Triple Diffused Transistor
R
2SC5198
VCEO=140V (min) 2SA1941
70W
RoHS
APPLICATIONS
Power Amplifier Applications
FEATURES
High collector voltage VCEO=140V (min) Complementary to 2SA1941 Recommended for 70-W high-fidelity audio frequency amplifier output RoHS product
Package
TO-247 |
 JILIN SINO |
 |
| 3 | 2SC5198 | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) 2SC5198
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
Unit: mm • • • High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ra |
 Toshiba Semiconductor |
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| 2 | 2SC5198 | SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5198
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage
PINNING PI |
 SavantIC |
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| 1 | 2SC5198B | Silicon NPN triple diffusion planar transistor SEMICONDUCTOR
2SC5198B Series
Silicon NPN triple diffusion planar transistor 10A/140V/100W
RoHS RoHS
Nell High Power Products
2.0
19.9±0.3
4.0
20.0 min
4.0 max
TO-3P(B) FEATURES
High breakdown voltage, V CEO =140V (min) Complementary to 2SA1941B TO-3P package which can be installed to the |
 NELL SEMICONDUCTOR |
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