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Datasheet 2SC5191 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SC5191 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5191
DESCRIPTION ·Low Voltage Operation ,Low Phase Distortion ·Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz ·Large Absolute Maximum Collector Cur |
 Inchange Semiconductor |
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| 3 | 2SC5191 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET
SILICON TRANSISTOR
2SC5191
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
• Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maxi |
 NEC |
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| 2 | 2SC5191-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET
SILICON TRANSISTOR
2SC5191
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
• Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maxi |
NEC |
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| 1 | 2SC5191-T2 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET
SILICON TRANSISTOR
2SC5191
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
• Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maxi |
NEC |
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