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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f =
Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe o
Ordering number:EN4802 NPN Epitaxial Planar Silicon Transistor 2SC5155 Low-Frequency General-Purpose Amplifier, Applications Applications · Various drivers. Features · High current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage. ·
DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maxi
2SC5196 AUDIO POWER AMPLIFIER DC TO DC CONVERTER NPN PLANAR SILICON TRANSISTOR SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SA1939 ABSOLUTE MAXIMUM RATING (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Cu
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT 2SC5108FT For VCO Application Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power
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