2SC5179
NEC
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONDATA SHEET
SILICON TRANSISTOR
2SC5179
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB
2SC5179-T1
NEC
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONDATA SHEET
SILICON TRANSISTOR
2SC5179
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB
2SC5179-T2
NEC
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONDATA SHEET
SILICON TRANSISTOR
2SC5179
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB