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2SC508 전자부품 데이터시트



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기능 검색 결과



2SC508  

SavantIC
SavantIC

2SC508

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC508 DESCRIPTION ·With TO-66 package ·High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS ·For power switching and TV horizontal output appli



2SC5080  

Hitachi Semiconductor
Hitachi Semiconductor

2SC5080

Silicon NPN Epitaxial

2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitt



2SC5081  

Hitachi Semiconductor
Hitachi Semiconductor

2SC5081

Silicon NPN Epitaxial

2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK–4 2 3 4 1 1. Collector 2. Emit



2SC5084  

Toshiba Semiconductor
Toshiba Semiconductor

2SC5084

Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 2SC5084 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics C



2SC5084  

Inchange Semiconductor
Inchange Semiconductor

2SC5084

Silicon NPN Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5084 DESCRIPTION ·High Gain Bandwidth Product fT = 7 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz APPLICATIONS ·Designed fo



2SC5085  

Toshiba Semiconductor
Toshiba Semiconductor

2SC5085

Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 2SC5085 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics



2SC5086  

Toshiba Semiconductor
Toshiba Semiconductor

2SC5086

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 2SC5086 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics



2SC5086  

Inchange Semiconductor
Inchange Semiconductor

2SC5086

Silicon NPN Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5086 DESCRIPTION ·Low Noise NF = 1.1dB TYP. @ f = 1GHz ·High Gain ︱S21e︱2= 11dB TYP. @ f = 1GHz APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applicatio



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