2SC508
SavantIC
SILICON POWER TRANSISTORSavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC508
DESCRIPTION ·With TO-66 package ·High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS ·For power switching and TV horizontal output appli
2SC5080
Hitachi Semiconductor
Silicon NPN Epitaxial2SC5080
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3 1 4
1. Collector 2. Emitt
2SC5081
Hitachi Semiconductor
Silicon NPN Epitaxial2SC5081
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK–4
2 3 4 1 1. Collector 2. Emit
2SC5084
Toshiba Semiconductor
Silicon NPN Epitaxial Planar Type TransistorTOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5084
2SC5084
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
C
2SC5084
Inchange Semiconductor
Silicon NPN TransistorINCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5084
DESCRIPTION ·High Gain Bandwidth Product
fT = 7 GHz TYP. ·High Gain, Low Noise Figure
︱S21e︱2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz
APPLICATIONS ·Designed fo
2SC5085
Toshiba Semiconductor
Silicon NPN Epitaxial Planar Type TransistorTOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5085
2SC5085
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
2SC5086
Toshiba Semiconductor
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086
2SC5086
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
2SC5086
Inchange Semiconductor
Silicon NPN TransistorINCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5086
DESCRIPTION ·Low Noise
NF = 1.1dB TYP. @ f = 1GHz ·High Gain
︱S21e︱2= 11dB TYP. @ f = 1GHz
APPLICATIONS ·Designed for VHF~UHF band low noise amplifier
applicatio