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2SC5065  

Toshiba Semiconductor
Toshiba Semiconductor

2SC5065

Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 2SC5065 VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characterist




관련 부품 2SC50 상세설명

2SC5099  

  
Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5099 120 80 6 6 3 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC5099 10ma



Sanken electric
Sanken electric

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2SC5052  

  
NPN EPITAXIAL TYPE (AUDIO POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS)



Toshiba Semiconductor
Toshiba Semiconductor

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2SC5050  

  
Silicon NPN Epitaxial

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i



Renesas
Renesas

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2SC5091FT  

  
Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base



Toshiba Semiconductor
Toshiba Semiconductor

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2SC5090  

  
Silicon NPN Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5090 DESCRIPTION ·High Gain Bandwidth Product fT = 10 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz APPLICATIONS ·Designed for VHF~UHF band low noise amplifier appl



Inchange Semiconductor
Inchange Semiconductor

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2SC5063  

  
Silicon NPN Triple Diffusion Planar Type

SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SC5063 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High-speed switching High collector to base voltage VCBO +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 Wide area of safe operation (A



Kexin
Kexin

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