2SC506
Micro Electronics
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2SC506
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2SC5060
ROHM Semiconductor
Power transistor (9010V/ 3A)2SC5060
Transistors
Power transistor (90±10V, 3A)
2SC5060
!Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connectio
2SC5063
Kexin
Silicon NPN Triple Diffusion Planar TypeSMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type 2SC5063
TO-252
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High-speed switching High collector to base voltage VCBO
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.
2SC5063
Panasonic Semiconductor
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Power Transistors
2SC5063
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q q
1.5max.
1.1max.
High-speed switching High collector to b
2SC5064
Toshiba Semiconductor
Silicon NPN Epitaxial Planar Type TransistorTOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5064
2SC5064
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
2SC5064
Inchange Semiconductor
Silicon NPN TransistorINCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5064
DESCRIPTION ·Low Noise and High Gain
NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP. @VCE = 5 V, f = 1.0 GHz
APPLICATIONS ·Designed for VHF~UHF band low noise amplifier app