|
2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5099 120 80 6 6 3 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC5099 10ma
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5090 DESCRIPTION ·High Gain Bandwidth Product fT = 10 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz APPLICATIONS ·Designed for VHF~UHF band low noise amplifier appl
SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SC5063 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High-speed switching High collector to base voltage VCBO +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 Wide area of safe operation (A
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |